MS1051 microsemi reserves the right to c hange, without notice, the specificati ons and informations contained herein, visit our website at www.microsemi.com or contact our factory direct. description: the MS1051 is a 12.5 v class c epitaxial silicon npn planar transistor designed primarily for hf communications. this device utilizes state-of-the-art diffused emitter ballasting to achieve extreme ruggedness under severe operating conditions. absolute maximum ratings (tcase = 25 c) s y mbol parameter v alue unit v cbo collector-base voltage 36 v v ceo collector-emitter voltage 18 v v ebo emitter-base voltage 4.0 v i c device current 20 a p diss power dissipation 290 w t j junction temperature +200 c t stg storage temperature -65 to +150 c thermal data r th(j-c) thermal resistance junction-case 0.6 c/w revision b, january 2010 features ? 30 mhz ? 12.5 volts ? p out = 100 watts ? g pe = 12.0 db minimum ? imd = ?30 dbc ? gold metallization ? common emitter configuration rf & microwave transistors hf ssb aplications
MS1051 microsemi reserves the right to c hange, without notice, the specificati ons and informations contained herein, visit our website at www.microsemi.com or contact our factory direct. electrical specifications (tcase = 25 c) static v alue symbol test conditions min. t yp . max. unit bv cbo i c = 100ma i e = 0ma 36 --- --- v bv ces i c = 100ma v be = 0v 36 --- --- v bv ceo i c = 100ma i b = 0ma 18 --- --- v bv ebo i e = 20ma i c = 0ma 4.0 --- --- v i ces v ce = 15v i c = 0ma --- --- 20 ma h fe v ce = 5v i c = 5ma 10 --- 200 --- dynamic v alue symbol test conditions min. t yp . max. unit p out f = 30 mhz v ce = 12.5 v i cq = 150ma 100 --- --- w g p f = 30 mhz v ce = 12.5 v i cq = 150ma 11 13 --- db imd 3 * p out = 100 w pep v ce = 12.5 v i cq = 150ma --- --- -30 dbc c ob f = 1 mhz v cb = 12.5 v --- 400 --- pf conditions: f1 = 30.000mhz f2 = 30.001mhz
MS1051 microsemi reserves the right to c hange, without notice, the specificati ons and informations contained herein, visit our website at www.microsemi.com or contact our factory direct. impedance data freq z in ( ?) z cl ( ?) 30 mhz 0.57 + j 0.78 0.80 + j 0.43 p out = 100 wpep, v ce = 12.5 v test circuit
MS1051 microsemi reserves the right to c hange, without notice, the specificati ons and informations contained herein, visit our website at www.microsemi.com or contact our factory direct. package mechanical data
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